NTD4969NT4G
Manufacturer:
On Semiconductor
Mfr.Part #:
NTD4969NT4G
Datasheet:
Description:
MOSFETs DPAK SMD/SMT N-Channel number of channels:1 26.3 W 30 V Continuous Drain Current (ID):12.7 A 9 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Max Power Dissipation | 1.38 W |
| Power Dissipation | 26.3 W |
| Number of Channels | 1 |
| Input capacitance | 837 pF |
| Continuous Drain Current (ID) | 12.7 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 13.3 ns |
| Element Configuration | Single |
| Fall Time | 6.4 ns |
| Rise Time | 27 ns |
| Gate Charge | 9 nC |
| Drain to Source Resistance | 19 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
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